High Sensitivity Low-Temperature Hydrogen Sensors Based on SnO2/κ(ε)-Ga2O3:Sn Heterostructure

The structural and gas-sensitive properties of n-N SnO2/κ(ε)-Ga2O3:Sn heterostructures were investigated in detail for the first time. κ(ε)-Ga2O3:Sn SnO2 films grown by halide vapor phase epitaxy high-frequency magnetron sputtering, respectively. gas sensor response speed operation structures under H2 exposure exceeded corresponding values single within temperature range 25–175 °C. Meanwhile, demonstrated a low to CO, NH3, CH4 gases high NO2, even at concentrations 100 ppm. current responses structure 104 ppm NO2 30–47 arb. un. 3.7 un., correspondingly, 125 increase sensitivity temperatures is explained rise electron concentration change microrelief film surface when depositing on κ(ε)-Ga2O3:Sn. heterostructures, having over wide operating range, can find application various fields.